PART |
Description |
Maker |
GB01SHT12-CAU-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
GB01SHT06-CAU-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
SHD618052AN SHD618052AP SHD618052BP SHD618052P SHD |
HERMETIC SILICON CARBIDE RECTIFIER 5 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
UPSC600 UPSC200 UPSC400 |
Silicon Carbide Schottky Rectifiers Silicon Carbide (SiC) Schottky
|
MICROSEMI[Microsemi Corporation]
|
STPSC406 STPSC406B-TR STPSC406D |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE 600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
BF623 Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BF622 Q62702-F1052 |
From old datasheet system NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
NXPSC06650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
C4D10120D-14 |
Silicon Carbide Schottky Diode
|
Cree, Inc
|